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Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy

TitlePhotoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy
Publication TypeJournal Article
Year of Publication2010
AuthorsBietti, S, Somaschini, C, Sarti, E, Koguchi, N, Sanguinetti, S, Isella, G, Chrastina, D, Fedorov, A
JournalNanoscale Research Letters
Volume5
Issue10
Pagination1650
Date Published2010/07/18
ISBN Number1556-276X
Abstract

We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature ≤350°C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.

URLhttps://doi.org/10.1007/s11671-010-9689-8
Short TitleNanoscale Research Letters